Dead strip detector

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Purpose: The most commonly used technology currently used for autoradiography is storage phosphor screens, which has many benefits such as a large field of view but lacks particle-counting detection of the time and energy of each detected radionuclide decay. A number of alternative designs, using either solid state or scintillator detectors, have been developed to address these issues. The aim of this study is to characterize the imaging performance of one such instrument, a double-sided silicon strip detector DSSD system for digital autoradiography. A novel aspect of this work is that the instrument, in contrast to previous prototype systems using the same detector type, provides the ability for user accessible imaging with higher throughput. Studies were performed to compare its spatial resolution to that of storage phosphor screens and test the implementation of multiradionuclide ex vivo imaging in a mouse preclinical animal study.
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Characterization of a double-sided silicon strip detector autoradiography system

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Characterization of a double-sided silicon strip detector autoradiography system

Skip to search form Skip to main content You are currently offline. Some features of the site may not work correctly. DOI: Wang and Shuchen Du and L. The depletion layer of the reversed biased pn junction spreads vertically to the back side of the detector while it spreads laterally to a distance comparable to the thickness of the wafer during operation. As a result, a volume of nonactive silicon has to be introduced at the periphery of the active region of the detector. The distance between the edge of the wafer and the ends of the… Expand.
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Reduction of the dead region for edge on strip detector by a guard ring structure

Skip to Main Content. A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity. Use of this web site signifies your agreement to the terms and conditions. Reduction of the dead region for edge on strip detector by a guard ring structure Abstract: p-i-n structures and high-resistivity silicon crystals are frequently used for silicon radiation detectors. The depletion layer of the reversed biased pn junction spreads vertically to the back side of the detector while it spreads laterally to a distance comparable to the thickness of the wafer during operation.
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Ionization losses depend on particle start energy and dead layer thickness which it passes through. For the set of three spectrum lines, an energy losses of lines dependence on dead layer thickness can be characterized by the following dimensionless expression. Figure 1.
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